Thermal Oxidation of Structured Silicon Dioxide

Thermal Oxidation Mechanism of Silicon Carbide

Modeling Process-Dependent Thermal Silicon Dioxide (SiO2) Films on Silicon

This study attempts to model correctly the process dependence of thermal SiO2 film physical structures and their associated densities, as well as high frequency dielectric constants, so as to provide a foundation for a ULSI process-dependent device reliability simulator. By exploring the characteristic signature of ellipsometric data reduced using a one-layer film model, and comparing it to a t...

Accurate Simulation of Mechanical Stresses in Silicon During Thermal Oxidation

The aim of this paper is to present viscoelastic models to accurately simulate mechanical stresses which result from volume expansion during thermal oxidation or temperature ramps in silicon technology. Comparisons are made with wafer curvature measurements and it is shown that mechanical stresses can explain the "anomalously" fast initial regime during dry oxidation, without involving any addi...

Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.

We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small lo...

The study of thermal silicon dioxide electrets formed by corona discharge and rapid-thermal annealing

A silicon dioxide (SiO2) electret passivates the surface of crystalline silicon (Si) in two ways: (i) when annealed and hydrogenated, the SiO2–Si interface has a low density of interface states, offering few energy levels through which electrons and holes can recombine; and (ii) the electret’s quasipermanent charge repels carriers of the same polarity, preventing most from reaching the SiO2–Si ...